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oai:figshare.com:article/34050186 2026-10-01T18:09:59Z category_4 category_146 category_7 category_8 category_21 category_24 category_873 category_39 category_69 category_132 category_134 portal_63 item_type_6 month_year_10_2026

Low-Temperature Synthesis of Large-Area Hexagonal Boron Nitride Films on Diverse Substrates by Plasma Afterglow Deposition Souvik Bhattacharya (6893564) He Lin Zhao (17780667) Amelia Schaeffer (24927484) Zachary Martin (22586264) Matthew P. Confer (8520498) Adam Rousseau (25158171) Ranveer Singh (792690) Zhiting Tian (4677940) Pinshane Y. Huang (1781683) Arend M. van der Zande (8339694) R. Mohan Sankaran (1284357) Biochemistry Space Science Medicine Microbiology Biotechnology Evolutionary Biology Chemical Sciences not elsewhere classified Ecology Inorganic Chemistry Infectious Diseases Virology including quantum photonics activate ammonia borane 300 ° c alternate synthesis methods 2d electronic devices much broader range excellent insulating properties directly synthesize large current growth methods amorphous insulating substrates 2 </ sub area hbn films temperature synthesis memristive devices wide range diverse range stoichiometric films hbn films thermal properties spatial afterglow require transfer representative metallic recent years potential applications narrow selection limit scale increasing list high temperatures gate dielectric fused silica environment coatings emerging technologies direct integration activated approach Hexagonal boron nitride (hBN) is a van der Waals material with excellent insulating properties that make it well-suited as a gate dielectric in 2D electronic devices. In recent years, the discovery of an ever-increasing list of properties has led to a much broader range of potential applications, including quantum photonics, memristive devices, and extreme-environment coatings. However, current growth methods for hBN films are characterized by a narrow selection of substrates and high temperatures that require transfer and limit scale-up. Here, we report a remote plasma-activated approach to directly synthesize large-area hBN films on a diverse range of representative metallic, semiconducting, and amorphous insulating substrates. Specifically, we employ the spatial afterglow of an Ar/H₂ plasma to activate ammonia borane, which enables the growth of thick (>30 nm), uniform, and stoichiometric films on substrates such as Si, SiO₂, glass, fused silica, Mo, and Al. Systematic spectroscopic characterization reveals that hBN films can be grown as low as 300 °C. Furthermore, plasma afterglow-grown hBN films exhibit mechanical, electrical, and thermal properties on par with or exceeding those reported by alternate synthesis methods. These results establish plasma afterglow growth for the direct integration of hBN into a wide range of emerging technologies. 2026-10-01T00:00:00Z Text Journal contribution 10.1021/acs.chemmater.6c01663.s001 https://figshare.com/articles/journal_contribution/Low-Temperature_Synthesis_of_Large-Area_Hexagonal_Boron_Nitride_Films_on_Diverse_Substrates_by_Plasma_Afterglow_Deposition/34050186 CC BY-NC 4.0