2026-10-12T03:20:54Z https://api.figshare.com/v2/oai

oai:figshare.com:article/34046047 2026-10-01T13:33:26Z category_4 category_146 category_915 category_7 category_21 category_45 category_734 category_64 category_69 portal_63 item_type_6 month_year_10_2026

Highly Oriented β‑In₂S₃ Thin Films Grown via Two-Flow-Channel Vertical Chemical Vapor Deposition for Photoconductive Devices Yuta Tanaka (529709) Noriyuki Urakami (8928704) Kana Saito (18714013) Kotaro Takamure (25156690) Akira Chikamatsu (1373157) Toshihiro Shimada (2862968) Takashi Yanase (2862962) Biochemistry Space Science Physical Sciences not elsewhere classified Medicine Biotechnology Sociology Biological Sciences not elsewhere classified Cancer Inorganic Chemistry suppress complex convection photoconductive device shows including reaction temperature defective spinel structure 81 × 10 intriguing optoelectronic properties photoconductive devices β 3 </ sub 2 </ sub 11 </ sup new cvd method highly oriented growth thin films according quality oriented β oriented growth highly oriented rigorous method optoelectronic applications high quality crystal quality thin films · w work provides supply amounts remains challenging ray diffraction raman spectroscopy produce high precursor temperatures light irradiation individual precursors high responsivity distinguishing polymorphs crystallographic orientation critical parameters β-In₂S₃ thin films with a defective spinel structure have attracted much attention due to their intriguing optoelectronic properties, yet it remains challenging to synthesize them with high quality and crystallographic orientation. This article reports the highly oriented growth of β-In₂S₃ thin films according to the symmetry of the sapphire substrate via two-flow-channel vertical chemical vapor deposition (CVD) with an automatic gas supply system. This sophisticated CVD system enables us to control all critical parameters, including reaction temperature, precursor temperatures, and supply amounts of individual precursors, as well as to suppress complex convection, which is vital for the controllable synthesis of β-In₂S₃ thin films. The crystal quality and oriented growth of the films were confirmed by X-ray diffraction and Raman spectroscopy. In addition, a rigorous method for distinguishing polymorphs of highly oriented In₂S₃ thin films is discussed to avoid the confusion seen in the literature. The as-fabricated In₂S₃ photoconductive device shows a high responsivity of 196 A·W^–1 and a detectivity of 4.81 × 10¹¹ Jones under white-light irradiation. Our work provides a new CVD method to produce high-quality oriented β-In₂S₃ thin films for optoelectronic applications. 2026-10-01T00:00:00Z Text Journal contribution 10.1021/acs.inorgchem.6c03168.s001 https://figshare.com/articles/journal_contribution/Highly_Oriented_In_sub_2_sub_S_sub_3_sub_Thin_Films_Grown_via_Two-Flow-Channel_Vertical_Chemical_Vapor_Deposition_for_Photoconductive_Devices/34046047 CC BY-NC 4.0