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        <identifier>oai:figshare.com:article/34037486</identifier>
        <datestamp>2026-10-01T01:05:29Z</datestamp>
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        <oai_dc:dc xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"  xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
          <dc:title>Quasi-Isostructural
Solid-Solution Formation of Cu&lt;sub&gt;4&lt;/sub&gt;TiSe&lt;sub&gt;4&lt;/sub&gt; with Cu&lt;sub&gt;3&lt;/sub&gt;TMQ&lt;sub&gt;4&lt;/sub&gt; (TM: V,
Nb, Ta; Q: S, Se): Tuning “Stuffing” Concentration for
Ultralow Thermal Conductivity</dc:title>
          <dc:creator>Arnab Dutta (1872166)</dc:creator>
          <dc:creator>Achintya Lakshan (14334571)</dc:creator>
          <dc:creator>Jürgen Nuss (2022172)</dc:creator>
          <dc:creator>Partha Pratim Jana (14334577)</dc:creator>
          <dc:subject>Space Science</dc:subject>
          <dc:subject>Medicine</dc:subject>
          <dc:subject>Chemical Sciences not elsewhere classified</dc:subject>
          <dc:subject>Immunology</dc:subject>
          <dc:subject>Biological Sciences not elsewhere classified</dc:subject>
          <dc:subject>Marine Biology</dc:subject>
          <dc:subject>Computational  Biology</dc:subject>
          <dc:subject>ray diffraction studies</dc:subject>
          <dc:subject>overall charge neutrality</dc:subject>
          <dc:subject>materials highly attractive</dc:subject>
          <dc:subject>low thermal conductivity</dc:subject>
          <dc:subject>4 ̅ 3</dc:subject>
          <dc:subject>5 +&lt;/ sup</dc:subject>
          <dc:subject>ultralow thermal conductivity</dc:subject>
          <dc:subject>&gt;) without affecting</dc:subject>
          <dc:subject>4 +&lt;/ sup</dc:subject>
          <dc:subject>sup &gt;+&lt;/ sup</dc:subject>
          <dc:subject>cubic unit cell</dc:subject>
          <dc:subject>solution formation leads</dc:subject>
          <dc:subject>substituted solid solutions</dc:subject>
          <dc:subject>3 &lt;/ sub</dc:subject>
          <dc:subject>allows additional cu</dc:subject>
          <dc:subject>4 &lt;/ sub</dc:subject>
          <dc:subject>solution formation</dc:subject>
          <dc:subject>&gt;&lt; sup</dc:subject>
          <dc:subject>ultralow regime</dc:subject>
          <dc:subject>additional “&lt;</dc:subject>
          <dc:subject>&gt;) inside</dc:subject>
          <dc:subject>p &lt;/</dc:subject>
          <dc:subject>interstitial &lt;/</dc:subject>
          <dc:subject>e &lt;/</dc:subject>
          <dc:subject>b &lt;/</dc:subject>
          <dc:subject>solution phases</dc:subject>
          <dc:subject>tm &lt;/</dc:subject>
          <dc:subject>tmq &lt;/</dc:subject>
          <dc:subject>type compounds</dc:subject>
          <dc:subject>systems crystallize</dc:subject>
          <dc:subject>substantial reduction</dc:subject>
          <dc:subject>space group</dc:subject>
          <dc:description>In this study, we adopted a quasi-isostructural solid-solution
strategy involving selenotitanate Cu&lt;sub&gt;4&lt;/sub&gt;TiSe&lt;sub&gt;4&lt;/sub&gt; and
sulvanite-type Cu&lt;sub&gt;3&lt;/sub&gt;&lt;i&gt;TMQ&lt;/i&gt;&lt;sub&gt;4&lt;/sub&gt; (&lt;i&gt;TM&lt;/i&gt;: V, Nb, Ta; &lt;i&gt;Q&lt;/i&gt;: S, Se). At room temperature,
both systems crystallize in the cubic &lt;i&gt;P&lt;/i&gt;4̅3&lt;i&gt;m&lt;/i&gt; space group, where Cu&lt;sub&gt;4&lt;/sub&gt;TiSe&lt;sub&gt;4&lt;/sub&gt; additionally
contains positionally disordered Cu&lt;sup&gt;+&lt;/sup&gt; cations occupying
two Wyckoff sites (1&lt;i&gt;b&lt;/i&gt; and 4&lt;i&gt;e&lt;/i&gt;) inside
the sulvanite framework. The crystal structures of the solid-solution
phases were determined by X-ray diffraction studies. Substituting
Ti&lt;sup&gt;4+&lt;/sup&gt; for &lt;i&gt;TM&lt;/i&gt;&lt;sup&gt;5+&lt;/sup&gt; in Cu&lt;sub&gt;3&lt;/sub&gt;&lt;i&gt;TMQ&lt;/i&gt;&lt;sub&gt;4&lt;/sub&gt; allows additional Cu&lt;sup&gt;+&lt;/sup&gt; to dissolve, maintaining the overall charge neutrality. The additional
“&lt;i&gt;interstitial&lt;/i&gt;” Cu&lt;sup&gt;+&lt;/sup&gt; ions
occupy positionally disordered sites (1&lt;i&gt;b&lt;/i&gt; and 4&lt;i&gt;e&lt;/i&gt;) without affecting the three-dimensional (3D) sulvanite
frameworks, with their occupancy controlled by the Ti&lt;sup&gt;4+&lt;/sup&gt;/&lt;i&gt;TM&lt;/i&gt;&lt;sup&gt;5+&lt;/sup&gt; ratio. Moreover, an ordering tendency
of the interstitial Cu&lt;sup&gt;+&lt;/sup&gt; ions is observed within the cubic
unit cell of the S-substituted solid solutions. This solid-solution
formation leads to a substantial reduction in effective thermal conductivity
relative to the parent sulvanite-type compounds, reaching the ultralow
regime, while the optical band gaps vary systematically between 0.9
and 2.62 eV. The combination of this low thermal conductivity and
tunable optical bandgap makes these materials highly attractive for
diverse applications.</dc:description>
          <dc:date>2026-09-30T00:00:00Z</dc:date>
          <dc:type>Text</dc:type>
          <dc:type>Journal contribution</dc:type>
          <dc:identifier>10.1021/acs.inorgchem.6c03738.s001</dc:identifier>
          <dc:relation>https://figshare.com/articles/journal_contribution/Quasi-Isostructural_Solid-Solution_Formation_of_Cu_sub_4_sub_TiSe_sub_4_sub_with_Cu_sub_3_sub_TMQ_sub_4_sub_TM_V_Nb_Ta_Q_S_Se_Tuning_Stuffing_Concentration_for_Ultralow_Thermal_Conductivity/34037486</dc:relation>
          <dc:rights>CC BY-NC 4.0</dc:rights>
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