2026-10-14T03:52:46Z https://api.figshare.com/v2/oai

oai:figshare.com:article/34033985 2026-09-30T16:23:27Z category_4 category_8 category_12 category_13 category_14 category_16 category_24 category_64 category_106 portal_63 item_type_6 month_year_09_2026

Gate-Tunable Unconventional Unidirectional Magnetoresistance in Chiral Tellurium Nanosheets Jaimin Kang (18523773) Hanhwi Jang (11897141) Hee-Chang Kyung (19183300) San Ko (2472928) Geun-Hee Lee (23030441) Jong-Guk Choi (24386623) Younghun Jo (2056747) Soogil Lee (1800526) Kab-Jin Kim (17511570) Yeon Sik Jung (1454701) Kyung-Jin Lee (446362) Byong-Guk Park (9524593) Biochemistry Microbiology Cell Biology Genetics Molecular Biology Physiology Evolutionary Biology Cancer Science Policy principles calculations explain opposite crystal handedness induced spin polarization host spin textures electronic structure near allowing unidirectional magnetoresistance intrinsic chiral origin magnetic field transverse chiral te nanosheets te nanosheets magnetic field chiral materials chiral axis bulk te symmetry restricts symmetry reduction reverses sign momentum space mirror symmetries level control lack inversion give rise effective routes Chiral materials, which lack inversion and mirror symmetries, host spin textures in momentum space that give rise to current-induced spin polarization. In bulk Te, symmetry restricts the induced spin polarization to the chiral axis, allowing unidirectional magnetoresistance (UMR) only when the magnetic field is aligned with this direction. Here, we demonstrate an unconventional UMR in chiral Te nanosheets that emerges under a magnetic field transverse to the chiral axis. The unconventional UMR exhibits nearly linear magnetic-field and current dependences and reverses sign with opposite crystal handedness, confirming its intrinsic chiral origin. First-principles calculations explain the unconventional UMR by out-of-plane spin polarization induced by symmetry reduction in Te nanosheets. Furthermore, electrostatic gating experiments demonstrate that the unconventional UMR is governed by the electronic structure near the Fermi level. These results establish symmetry reduction and Fermi-level control as effective routes to generating multiaxis spin polarization in chiral materials. 2026-09-30T00:00:00Z Text Journal contribution 10.1021/acs.nanolett.6c03583.s001 https://figshare.com/articles/journal_contribution/Gate-Tunable_Unconventional_Unidirectional_Magnetoresistance_in_Chiral_Tellurium_Nanosheets/34033985 CC BY-NC 4.0