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oai:figshare.com:article/34028568 2026-09-30T02:03:34Z category_1 category_4 category_146 category_8 category_21 category_272 category_873 category_39 category_106 portal_63 item_type_6 month_year_09_2026

Decoupling Electron and Hole Injection Dynamics in Colloidal Nanocrystals via Potentiostatic Polarization Spectroelectrochemistry Junkai Wang (3092706) Huichao Zhang (1454980) Bo Huang (30906) Chenyu Du (784683) Shiji Chen (20406821) Biophysics Biochemistry Space Science Microbiology Biotechnology Environmental Sciences not elsewhere classified Chemical Sciences not elsewhere classified Ecology Science Policy whose rapid charging reversible spectral blueshift pure wurtzite cdse practical device operation outstanding optoelectronic potential may yield results hole injection dynamics gradual potential scans driven intensive study charge carrier behavior gradual electron injection positive bias ). decoupling electron negative bias typically relies trap states excess electrons differences stem conventional spectroelectrochemistry colloidal nanocrystals cds core The outstanding optoelectronic potential of colloidal nanocrystals has driven intensive study of their charge carrier behavior. However, conventional spectroelectrochemistry (SEC) may yield results that deviate from practical device operation because it typically relies on gradual potential scans. Here, we investigate mixed-phase and pure wurtzite CdSe/CdS core/shell nanocrystals using potentiostatic polarization SEC. Mixed-phase nanocrystals exhibit spectral recovery under both biases, originating from self-elimination of excess electrons (negative bias) and photo-assisted elimination of trap states, whose rapid charging/discharging induces local electric field fluctuations that cause asymmetric spectral broadening (positive bias). In contrast, pure wurtzite nanocrystals allow additional hole injection, causing a reversible spectral blueshift. Under negative bias, they exhibit slow photoluminescence quenching and redshift from gradual electron injection. These differences stem from the lack of conduction band intermediate levels and a valence band barrier due to zinc blende stacking faults, suggesting microstructural engineering may enable balanced carrier injection. 2026-09-29T00:00:00Z Text Journal contribution 10.1021/acs.jpclett.6c02515.s001 https://figshare.com/articles/journal_contribution/Decoupling_Electron_and_Hole_Injection_Dynamics_in_Colloidal_Nanocrystals_via_Potentiostatic_Polarization_Spectroelectrochemistry/34028568 CC BY-NC 4.0