2026-10-13T12:23:21Z https://api.figshare.com/v2/oai

oai:figshare.com:article/34002277 2026-09-26T05:40:07Z category_1 category_146 category_7 category_21 category_734 category_931 category_106 category_133 portal_87 item_type_3 month_year_09_2026

Design of a H-terminated diamond MOSFET device structure with an improved breakdown performance by TCAD simulation Hanming Ding (2441101) Kun Tang (75641) Bo Feng (141991) Xiaolong Wu (5008658) Liangxue Gu (12081206) Chuang Wang (319638) Cheng Wang (102692) Xiang Xiong (1810234) Shunming Zhu (9974369) Jiandong Ye (3147726) Shulin Gu (2411188) Biophysics Space Science Medicine Biotechnology Biological Sciences not elsewhere classified Information Systems not elsewhere classified Science Policy Plant Biology Diamond MOSFET hydrogen-termination breakdown voltage Baliga’s figure of merit (BFOM) TCAD <p>This paper proposes a hydrogen-terminated diamond MOSFET structure with a buried N-layer and systematically studies its static and breakdown characteristics using Sentaurus TCAD. By introducing an N-type buried layer below the gate-drain channel, the internal electric field distribution of the device is effectively modulated, while new electric field peaks are formed within the drift region, achieving uniform distribution of the electric field between gates and drains. Simulation results show that the proposed structure can significantly increase the device breakdown voltage while having less impact on on-resistance, thereby achieving a higher Baliga’s figure of merit (BFOM).</p> 2026-09-26T05:40:07Z Dataset Dataset 10.6084/m9.figshare.34002277.v1 https://figshare.com/articles/dataset/Design_of_a_H-terminated_diamond_MOSFET_device_structure_with_an_improved_breakdown_performance_by_TCAD_simulation/34002277 CC BY 4.0