2026-10-12T18:13:04Z https://api.figshare.com/v2/oai

oai:figshare.com:article/33935317 2026-09-18T13:05:19Z portal_1197 item_type_3 month_year_09_2026

Data for Impact of co-reactants in atomic layer deposition of high-κ dielectrics on monolayer molybdenum disulfide Brendan F. M. Healy (20979829) Sophie L. Pain (11896239) Marc Walker (1429663) Nicholas E. Grant (6877136) John D. Murphy (6877151) Chalcogenides Transition metals Transition metal compounds Transition metals -- Electric properties Dielectrics Two-dimensional materials Atomic layer deposition Migrated from ePrints The integration of single-layer transition metal dichalcogenides (TMDCs) in nanoscale field-effect transistor devices requires the deposition of a high dielectric constant (high-κ) material to act as the gate dielectric. Traditional thermal atomic layer deposition (ALD) is commonly used to deposit dielectrics on three-dimensional substrates, but ALD of high-κ materials on monolayer TMDCs is more challenging. Thermal ALD with water (H2O) co-reactant often results in incomplete and nonuniform dielectric growth on atomically thin TMDCs, owing to a chemically inert basal plane. The development of alternative ALD processes for the realization of dielectric layers on monolayer TMDCs is therefore important. Here, we study oxygen (O2) plasma and ozone (O3) as co-reactants for the ALD of aluminum oxide (Al2O3) and hafnium dioxide (HfO2) on monolayer molybdenum disulfide (1L MoS2) films. By employing a robust characterization process that combines atomic force microscopy, Raman/photoluminescence spectroscopy, and X-ray photoelectron spectroscopy, we reveal growth of high-κ dielectrics by plasma-enhanced ALD with O2 plasma oxidant damages the underlying 1L MoS2 via oxidation to molybdenum trioxide (MoO3). No significant deleterious oxidation to MoO3 is observed following O3-based deposition on 1L MoS2, and we demonstrate the growth of HfO2 via thermal ALD with O3 co-reactant. This work reveals the impact of ALD processes on 1L MoS2 during the growth of high-κ dielectrics, highlighting O3-based thermal ALD as a potential route for the integration of dielectric layers on 1L MoS2 for nanoscale optoelectronic device fabrication.<br><br>Dataset to support an article accepted for publication in ACS Applied Nano Materials. 2025-03-25T00:00:00Z Dataset Dataset 10.82444/warw.33935317.v1 https://figshare.com/articles/dataset/Data_for_Impact_of_co-reactants_in_atomic_layer_deposition_of_high-_dielectrics_on_monolayer_molybdenum_disulfide/33935317 CC BY 4.0