<?xml version='1.0' encoding='utf-8'?>
<?xml-stylesheet type="text/xsl" href="/v2/static/oai2.xsl"?>
<OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd">
  <responseDate>2026-10-12T20:23:28Z</responseDate>
  <request identifier="oai:figshare.com:article/33915784" metadataPrefix="oai_dc" verb="GetRecord">https://api.figshare.com/v2/oai</request>
  <GetRecord>
    <record>
      <header>
        <identifier>oai:figshare.com:article/33915784</identifier>
        <datestamp>2026-09-17T22:19:14Z</datestamp>
        <setSpec>portal_1197</setSpec>
        <setSpec>item_type_3</setSpec>
        <setSpec>month_year_09_2026</setSpec>
      </header>
      <metadata>
        <oai_dc:dc xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"  xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
          <dc:title>Data for A Generalized Convolution-Based Framework for Quantitative SIMS Depth Profiling of Nanoscale Layers</dc:title>
          <dc:creator>Thomas P. A. Hase (21518034)</dc:creator>
          <dc:subject>Migrated from ePrints</dc:subject>
          <dc:description>Nanoscale layers consist of ultra-sharp dopant distributions embedded within a matrix and are increasingly important for advanced electronic and quantum devices. Although an ideal $\delta$-layer is confined to a single atomic plane, real structures have a finite spatial extent owing to growth kinetics, interfacial roughness and atomic-scale intermixing. Quantitative characterisation therefore requires the intrinsic dopant distribution to be separated from the instrumental broadening. In secondary ion mass spectrometry (SIMS), the measured profile is a convolution of the sample distribution with an energy-dependent response function arising from ion-beam-induced effects. Previous SIMS analyses have generally represented $\delta$-layers by either Gaussian or boxcar distributions, corresponding to two limiting profile shapes. Here, we introduce a convolution-based framework employing a flexible sample function that varies continuously between these limits. Combined with a global multi-energy fitting strategy, the approach separates the energy-dependent response function from the energy-independent sample profile and simultaneously determines their parameters. Application to representative boron $\delta$-layer structures produces consistent fits across a broad range of primary ion energies and reproducible intrinsic profiles from independently analysed layers. The framework provides a unified method for determining the intrinsic width and shape of nanoscale layers from energy-dependent SIMS measurements.&lt;br&gt;&lt;br&gt;The data supporting the findings of this study are provided in the accompanying ZIP archives. Figures 3 and S3 present a subset of the data obtained from a single BN δ-layer. The complete raw dataset corresponding to these figures is available in the archive B Si SingleLayer.zip. Likewise, Figures 4 and S4 present a subset of the data obtained from B δ-layers in Si. The complete raw dataset corresponding to these figures is available in the archive B MultiLayer.zip.</dc:description>
          <dc:date>2026-09-17T22:19:14Z</dc:date>
          <dc:type>Dataset</dc:type>
          <dc:type>Dataset</dc:type>
          <dc:identifier>10.82444/warw.33915784.v1</dc:identifier>
          <dc:relation>https://figshare.com/articles/dataset/Data_for_A_Generalized_Convolution-Based_Framework_for_Quantitative_SIMS_Depth_Profiling_of_Nanoscale_Layers/33915784</dc:relation>
          <dc:rights>CC BY 4.0</dc:rights>
        </oai_dc:dc>
      </metadata>
    </record>
  </GetRecord>
</OAI-PMH>
