2026-10-14T08:39:04Z https://api.figshare.com/v2/oai

oai:figshare.com:article/33915307 2026-09-17T22:10:12Z portal_1197 item_type_3 month_year_09_2026

Data for Temperature-dependent carrier lifetime in silicon heterojunction solar cells measured using photoexcited muon spin spectroscopy Anup Yadav (24860731) Sophie L. Pain (11896239) Nicholas E. Grant (6877136) Yan Zhu (112437) Ziv Hameiri (4344415) Fabian T. Thome (25066102) Pietro P. Altermatt (24935917) James S. Lord (2333971) Koji Yokoyama (839500) John D. Murphy (6877151) Migrated from ePrints Understanding temperature-dependent carrier recombination is essential for optimizing the performance of high efficiency solar cells across a wide range of operating conditions. In this work, temperature-dependent lifetime is measured in the 77–290 K temperature range in a completed silicon heterojunction (SHJ) solar cell by photoexcited muon spin spectroscopy (photo-µSR). Measurements are also made in a SHJ cell stripped back to the base substrate and a reference silicon substrate, both of which were passivated with aluminium oxide. By validation of results with conventional techniques including photoconductance decay (PCD), photoluminescence (PL) imaging, harmonically modulated PL and Suns-Voc, it shown that photo-µSR can be used to study carrier dynamics in substrates and fully processed devices. At room temperature, the completed SHJ cell exhibited shorter effective lifetimes compared to its stripped and re-passivated substrate counterpart, indicative of higher recombination associated with the metallised and interface layers. For the SHJ cells and passivated wafer samples, carrier lifetime increases with increasing temperature. Although absolute lifetimes measured by photo-µSR decrease due to cumulative muon irradiation damage, the temperature-dependent trends benchmarked with PCD measurements on equivalent substrates were in good agreement. The study demonstrates that photo-µSR can infer information on temperature-dependent recombination in silicon solar cells as part of a suite of characterisation tools for measuring carrier dynamics in semiconductor devices.<br><br>The dataset (a single file in XLSX format) contains the data behind the figures in the paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper. Please address any queries to john.d.murphy@warwick.ac.uk or nicholas.e.grant@warwick.ac.uk. 2026-09-17T22:10:12Z Dataset Dataset 10.82444/warw.33915307.v1 https://figshare.com/articles/dataset/Data_for_Temperature-dependent_carrier_lifetime_in_silicon_heterojunction_solar_cells_measured_using_photoexcited_muon_spin_spectroscopy/33915307 CC BY 4.0