2026-10-14T13:37:56Z https://api.figshare.com/v2/oai

oai:figshare.com:article/33881011 2026-09-17T09:41:05Z portal_1197 item_type_3 month_year_09_2026

Data for Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon Sophie L. Pain (11896239) Edris Khorani (24860734) Anup Yadav (24860731) Tim Niewelt (24860737) Antonio Leimenstoll (25010257) Brendan F. M. Healy (20979829) Marc Walker (1429663) David Walker (36297) Nicholas E. Grant (6877136) John D. Murphy (6877151) Atomic layer deposition Hafnium oxide Silicon Dielectrics Migrated from ePrints Hafnium oxide thin films have attracted considerable interest for passivation layers, protective barriers, and anti-reflection coatings. Atomic layer deposition offers a route to produce conformal films at the nanometre scale, but there is a lack of clarity over how the growth conditions affect the film properties. Here we present a study into the role of different co-reactants (O2 plasma, O3 and H2O) for the atomic layer deposition of HfOx on n-type silicon from a tetrakis(dimethylamido)hafnium (TDMAH) precursor at 200 °C followed by post-deposition annealing (up to 500 °C). Through X-ray diffraction and X-ray photoelectron spectroscopy, we demonstrate variations in film composition, stoichiometry and crystallinity with co-reactant. Depth profiling conducted with X-ray photoelectron spectroscopy reveals differences in composition between the HfOx surface and the HfOx/Si interface. We also determine differences in the charge level and chemical passivation through photoconductance decay measurements and Kelvin probe analysis. We find that surface recombination velocities <10 cm s-1 are possible for HfOx films, with the best passivation achieved for H2O-based HfOx (SRVs as low as ~5 cm s-1). We show that with TDMAH as a hafnium precursor, neither co-reactant choice nor annealing ambient influence resulting charge polarity.<br><br>Dataset to support a publication in RSC Applied Interfaces. 2023-12-13T00:00:00Z Dataset Dataset 10.82444/warw.33881011.v1 https://figshare.com/articles/dataset/Data_for_Influence_of_co-reactants_on_surface_passivation_by_nanoscale_hafnium_oxide_layers_grown_by_atomic_layer_deposition_on_silicon/33881011 CC BY 4.0