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        <identifier>oai:figshare.com:article/33819934</identifier>
        <datestamp>2026-09-15T19:37:16Z</datestamp>
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          <dc:title>Data for Gallium-doped silicon for high-efficiency commercial passivated emitter and rear solar cells</dc:title>
          <dc:creator>Nicholas E. Grant (6877136)</dc:creator>
          <dc:creator>Pietro P. Altermatt (24935917)</dc:creator>
          <dc:creator>Tim Niewelt (24860737)</dc:creator>
          <dc:creator>Regina Post (24953479)</dc:creator>
          <dc:creator>Wolfram Kwapil (24953482)</dc:creator>
          <dc:creator>Martin C. Schubert (5549111)</dc:creator>
          <dc:creator>John D. Murphy (6877151)</dc:creator>
          <dc:subject>Gallium</dc:subject>
          <dc:subject>Gallium arsenide solar cells</dc:subject>
          <dc:subject>Photovoltaic cells -- Materials</dc:subject>
          <dc:subject>Silicon compounds</dc:subject>
          <dc:subject>Migrated from ePrints</dc:subject>
          <dc:description>Czochralski‐grown gallium doped silicon wafers are now a mainstream substrate for commercial passivated emitter and rear (PERC) solar cells and allow retention of established processes while offering enhanced cell stability. We have assessed the carrier lifetime potential of such Czochralski‐grown wafers in dependence of resistivity, finding effective lifetimes well into the millisecond region without any gettering or hydrogenation processing, thus demonstrating one advantage over boron doped silicon. Secondly, we monitor the stability of gallium doped PERC cells under illumination (&gt; 3000 h in some cases) and detect anomalous behaviour. While some cells are stable, others exhibit a degradation then recovery, reminiscent of light and elevated temperature induced degradation (LeTID) observed in other silicon materials. Surprisingly, cells from one ingot exhibit LeTID‐like behaviour when annealed at 300 °C but near stability when not annealed, but, for another ingot, the opposite is observed. Moreover, a stabilisation process typically used to mitigate boron‐oxygen degradation does not influence any cells we have studied. Secondary ion mass spectrometry of the PERC cells reveals significant concentrations of unintentionally incorporated boron in some cases. Nevertheless, even in the absence of mitigating light induced degradation, Ga doped silicon is still more stable than unstabilised B doped silicon under illumination.&lt;br&gt;&lt;br&gt;Data record consists of an excel spreadsheet containing the raw data and an accompanying readme file. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.</dc:description>
          <dc:date>2026-09-15T19:37:16Z</dc:date>
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          <dc:identifier>10.82444/warw.33819934.v1</dc:identifier>
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          <dc:rights>CC BY 4.0</dc:rights>
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