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oai:figshare.com:article/33812236 2026-10-01T12:07:46Z category_36833 portal_1075 item_type_3 month_year_10_2026

Supplementary material Zain Ul Abdin (19200667) Rajendra Kumar (1773094) Govardan Gopakumar (19200664) Michael Manfra (19200670) Oana Malis (2009857) Physical sciences molecular beam epitaxy intersubband transitions The supplementary material file provides material parameters used in the nextnano++ simulations of ScAlN/GaN band-structure, equations for the ISB absorption and calculated values of the dipole matrix element. Figure S1 shows the effect of interdiffusion on the band structure of a Sc0.14Al0.86N/GaN (6 nm/6 nm) QW. Figure S2 shows the composition profiles for 1 nm and 2 nm Sc0.14Al0.86N/GaN QWs assumed in the proposed simplified model of interdiffusion. 2026-10-01T12:07:46Z Dataset Dataset 10.60893/figshare.jap.33812236.v1 https://figshare.com/articles/dataset/Supplementary_material/33812236 CC BY 4.0