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        <identifier>oai:figshare.com:article/33792121</identifier>
        <datestamp>2026-09-15T12:22:04Z</datestamp>
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          <dc:title>Data for Anodic oxidations : excellent process durability and surface passivation for high efficiency silicon solar cells</dc:title>
          <dc:creator>Nicholas E. Grant (6877136)</dc:creator>
          <dc:creator>T. C. Kho (24899617)</dc:creator>
          <dc:creator>K. C. Fong (2985903)</dc:creator>
          <dc:creator>E. Franklin (23319178)</dc:creator>
          <dc:creator>K. R. McIntosh (24932755)</dc:creator>
          <dc:creator>M. Stocks (24932758)</dc:creator>
          <dc:creator>Y. Wang (473169)</dc:creator>
          <dc:creator>Er-Chien Wang (24930172)</dc:creator>
          <dc:creator>N. S. Zin (24932761)</dc:creator>
          <dc:creator>John D. Murphy (6877151)</dc:creator>
          <dc:creator>A. Blakers (20000604)</dc:creator>
          <dc:subject>Electrolytic oxidation</dc:subject>
          <dc:subject>Silica</dc:subject>
          <dc:subject>Silicon</dc:subject>
          <dc:subject>Solar cells</dc:subject>
          <dc:subject>Silicon solar cells</dc:subject>
          <dc:subject>Silicon solar cells -- Effect of high temperatures on</dc:subject>
          <dc:subject>Surface chemistry</dc:subject>
          <dc:subject>Migrated from ePrints</dc:subject>
          <dc:description>We investigate the versatility of anodically grown silicon dioxide (SiO2) films in the context of process durability and exceptional surface passivation for high efficiency (&gt;23%) silicon solar cell architectures. We show that a room temperature anodic oxidation can achieve a thickness of ~70 nm within ~30 min, comparable to the growth rate of a thermal oxide at 1000 °C. We demonstrate that anodic SiO2 films can mask against wet chemical silicon etching and high temperature phosphorus diffusions, thereby permitting a low thermal budget method to form patterned structures. We investigate the saturation current density J0 of anodic SiO2/silicon nitride stacks on phosphorus diffused and undiffused silicon and show that a J0 of &lt;10 fA cm−2 can be achieved in both cases. Finally, to showcase the anodic SiO2 films on a device level, we employed the anodic SiO2/silicon nitride stack to passivate the rear surface of an interdigitated back contact solar cell, achieving an efficiency of 23.8%.&lt;br&gt;&lt;br&gt;--&gt;Software required Microsoft Excel --&gt; Organisation One sheet per figure containing the data used in the related paper --&gt;Nature of the data Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.</dc:description>
          <dc:date>2020-02-25T00:00:00Z</dc:date>
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          <dc:identifier>10.82444/warw.33792121.v1</dc:identifier>
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          <dc:rights>CC BY 4.0</dc:rights>
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