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oai:figshare.com:article/33787933 2026-09-29T12:03:15Z category_32963 portal_1075 item_type_3 month_year_09_2026

Supplementary Information Mansi Patil (19964603) Devarshi Dhoble (24928459) Shivaram Kubakaddi (24928462) Mamta Raturi (9643096) MARCO VILLENA (24928465) Gaurav Thareja (459188) Saurabh Lodha (1427566) Engineering Tungsten-doped tin oxide (TWO) Atomic layer deposition (ALD) Indium-free oxide semiconductors Positive bias stability (PBS) See Supplementary Material for detailed experimental procedure, targeted and achieved W-concentrations TWO films, XRD and AFM of annealed W10P, gate leakage (IGS-VGS) of TWO TFTs with varying W content, G-TLM analysis of W10P TFTs, GinestraTM parameters for channel and dielectric, PBS of non-annealed W10P, stretched exponential fitting of PBS induced ∆Vth, and long-term stability of non-annealed W10P TFT. 2026-09-29T12:03:15Z Dataset Dataset 10.60893/figshare.apl.33787933.v1 https://figshare.com/articles/dataset/Supplementary_Information/33787933 CC BY 4.0