2026-10-11T03:14:50Z https://api.figshare.com/v2/oai

oai:figshare.com:article/33782143 2026-09-15T09:29:28Z portal_1197 item_type_3 month_year_09_2026

Data for Defect dynamics in self-catalyzed III-V semiconductor nanowires James A. Gott (5746952) Richard Beanland (768962) H. Aruni Fonseka (1658170) Jonathan J. P. Peters (3777724) Yunyan Zhang (1269093) Huiyun Liu (845957) Ana M. Sánchez (2439316) Nanowires Compound semiconductors Semiconductors -- Defects Nanotechnology Migrated from ePrints The droplet consumption step in self-catalyzed III-V semiconductor nanowires can produce material that contains a high density of line defects. Interestingly, these defects are often associated with twin boundaries and have null Burgers vector, i.e. no long-range strain field. Here we analyze their stability by considering the forces that act on them and use in-situ aberration corrected scanning transmission electron microscopy (STEM) to observe their behavior in GaAsP NWs using short annealing cycles. Their movement appears to be consistent with the thermally-activated single- or double-kink mechanisms of dislocation glide, with velocities that do not exceed 1 nm s-1. We find that motion of individual defects depends on their size, position, and surrounding environment and set an upper limit to activation energy around 2eV. The majority of defects (>70%) are removed by our post-growth annealing for several seconds at temperatures in excess of 640 °C, suggesting that in-situ annealing during growth at lower temperatures would significantly improve material quality. The remaining defects do not move at all and are thermodynamically stable in the nanowire.<br><br>Electron microscope images and data in formats .dm4, .xlsx, .tif, .png, .avi and .mp4. Filenames as follows are individually available for download: 1a.dm4: ADF STEM image of a nanowire with defective tip. 1b.dm4: ADF STEM image of a twin bounded by two Σ3 {112} twin facets. 2d.xlsx: Data for forces acting on a 3ML defect. 3a.xlsx: Data for number of moving and stationary defects after heating cycles. 3b.xlsx: Data for histogram of velocity values measured for different temperatures. 3b-i1.dm4: BF STEM image of a nanowire with defective tip. 3b-i2.dm4: BF STEM image of a nanowire with defective tip. 3b-i3.dm4: BF STEM image of a nanowire with defective tip. 4b.dm4: ADF STEM image of a 3ML defect in the process of moving. 4c.dm4: ADF STEM image of a 3ML defect in the process of moving. 4d.dm4: ADF STEM image of a region after the defect has been removed. 5a.dm4: ADF STEM image of a 3ML defect in the process of moving. 5b.dm4: ADF STEM image of a 3ML defect in the process of moving. 5c.dm4: ADF STEM image of a 3ML defect in the process of moving. 5d.dm4: ADF STEM image of a 3ML defect in the process of moving. 5e.xlsx: Data of defect positions after different heat cycles. 5f.xlsx: Data of defect velocities for different temperatures. s2a.tif: SEM image of nanowires on substrate. s2b.tif: SEM side image of nanowires with defective tips. s3a.xlsx: Data of defect positions after different heat cycles. s3b.xlsx: Data of defect velocities for different temperatures. s5a.dm4: ADF STEM image of 3ML type defects in a nanowire. s5b.dm4: ADF STEM image of 3ML type defects in a nanowire. s5c.dm4: ADF STEM image of 3ML type defects in a nanowire. s5d.dm4: ADF STEM image of 3ML type defects in a nanowire. s6a.dm4: ADF STEM image of a nanowire with defective tip. s6b.xlsx: ADF intensity profile taken across the width of a nanowire. s7a.dm4: ADF STEM image of a twin bounded by two Σ3 {112} twin facets. s8b.dm4: ADF STEM image of a 3ML defect in the process of moving. s8c.dm4: ADF STEM image of a 3ML defect in the process of moving. s8d.dm4: ADF STEM image of a 3ML defect in the process of moving. SI1a.png: Frame from movie of a nanowire with catalyst droplet attached before heating. SI1b.png: Frame from movie of a nanowire with catalyst droplet attached after heating. SI4.png: ADF STEM image of 3ML type defects in a nanowire. SuppMovie2-DefectMotion.avi: TEM video of a NW with catalyst droplet still attached being heated in situ and cooled and the formation of a defect observed. DefectForm3.mp4: ADF STEM video of observed defect motion 2019-07-25T00:00:00Z Dataset Dataset 10.82444/warw.33782143.v1 https://figshare.com/articles/dataset/Data_for_Defect_dynamics_in_self-catalyzed_III-V_semiconductor_nanowires/33782143 CC BY 4.0