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        <datestamp>2026-09-29T12:02:57Z</datestamp>
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          <dc:title>Additional Material for Reviewer</dc:title>
          <dc:creator>Yi Zhao (14034)</dc:creator>
          <dc:creator>Muyang Huang (21328619)</dc:creator>
          <dc:creator>Fang Lyu (7377464)</dc:creator>
          <dc:creator>Hongkun Yang (8070962)</dc:creator>
          <dc:creator>Xiaolong Sun (1726846)</dc:creator>
          <dc:creator>Yong Liu (6908)</dc:creator>
          <dc:creator>Yue Hou (2562085)</dc:creator>
          <dc:creator>Ziyu Wang (451367)</dc:creator>
          <dc:creator>Rui Xiong (1434895)</dc:creator>
          <dc:subject>Physical sciences</dc:subject>
          <dc:subject>Thermoelectric</dc:subject>
          <dc:subject>Thin films</dc:subject>
          <dc:subject>Ion implantation</dc:subject>
          <dc:description>This Supplementary Material provides detailed information on the fabrication, ion implantation, and post-annealing treatment of Ni-implanted Sb₂Te₃ thin films. It also presents complementary structural, chemical, morphological, and theoretical analyses, including XRD, XPS, SEM/EDS mapping, and relaxation calculations, together with additional thermoelectric measurements as functions of film thickness and implantation voltage. These results support the discussion of ion-implantation-induced resonant states and their role in enhancing the thermoelectric response of Sb₂Te₃ thin films.</dc:description>
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