2026-10-14T14:18:03Z https://api.figshare.com/v2/oai

oai:figshare.com:article/33781129 2026-09-15T09:12:35Z category_1 category_4 category_146 category_915 category_7 category_8 category_16 category_873 category_502 category_734 category_132 portal_63 item_type_3 month_year_09_2026

Interfacial Oxidation Unlocks Degenerate n‑Doping in Monolayer MoS₂ Marco Bianchi (1781833) Daniel Lizzit (6250430) Alberto Turoldo (24919825) Ezequiel Tosi (10144508) Paolo Lacovig (1309266) Monika Schied (9584774) Davide Curcio (1494805) Charlotte E. Sanders (2014042) Silvano Lizzit (1309245) Philip Hofmann (1690519) Biophysics Biochemistry Space Science Physical Sciences not elsewhere classified Medicine Microbiology Physiology Chemical Sciences not elsewhere classified Astronomical and Space Sciences not elsewhere classified Biological Sciences not elsewhere classified Infectious Diseases combining photoelectron spectroscopy 2d semiconductor devices modifying band alignment mediated contact architectures bi layer produces 13 </ sup 2 </ sub β </ n </ conduction band band occupation ideal bi >- bi layer mos whereas oxidation v semimetals transfer doping recent advances pronounced occupation placing single interface engineering electron density detectable conduction carrier density >- doping Recent advances in interface engineering have overcome high contact resistance in 2D semiconductor devices by modifying band alignment and carrier density of transition metal dichalcogenide contacts, including through group-V semimetals and charge-transfer doping. Combining photoelectron spectroscopy, diffraction, and microscopy, we demonstrate that placing single-layer MoS₂ in contact with a pristine Bi layer results only in weak <i>n</i>-doping and no detectable conduction-band occupation, whereas oxidation of the Bi layer produces a pronounced occupation of the MoS₂ conduction band with an electron density on the order of 10¹³ cm^–2. We attribute this strong <i>n</i>-type charge transfer to the formation of an ultrathin <i>β</i>-Bi₂O₃-like layer with an unusually low effective work function, consistent with our measurements and calculations for an ideal Bi-terminated <i>β</i>-Bi₂O₃(201) surface. These results establish interfacial oxidation as a means to engineer strong <i>n</i>-type charge transfer at transition metal dichalcogenide interfaces and motivate future transport studies of oxide-mediated contact architectures. 2026-09-15T00:00:00Z Dataset Dataset 10.1021/acs.nanolett.6c04142.s002 https://figshare.com/articles/dataset/Interfacial_Oxidation_Unlocks_Degenerate_n_Doping_in_Monolayer_MoS_sub_2_sub_/33781129 CC BY-NC 4.0