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        <datestamp>2026-09-30T12:01:35Z</datestamp>
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          <dc:title>Supplementary Material</dc:title>
          <dc:creator>Somayeh Shams (16510601)</dc:creator>
          <dc:creator>Shail Shah (498825)</dc:creator>
          <dc:creator>Ingmar Ratschinski (20548835)</dc:creator>
          <dc:creator>Daniel Hiller (668767)</dc:creator>
          <dc:subject>Physical sciences</dc:subject>
          <dc:subject>Modulation Acceptor Doping</dc:subject>
          <dc:subject>Atomic Layer Deposition</dc:subject>
          <dc:subject>Silicon Doping</dc:subject>
          <dc:subject>Hall-effect Measurement</dc:subject>
          <dc:subject>Aluminum Oxide</dc:subject>
          <dc:description>Additional information for manuscript "Influence of Al-precursor and Oxidant on the performance of ALD-Al2O3 ultra-thin films embedded in SiO2 for Modulation Acceptor Doping of Silicon"</dc:description>
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