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oai:figshare.com:article/33777148 2026-09-15T07:56:14Z portal_1197 item_type_3 month_year_09_2026

Data for Effect of HCl cleaning on InSb–Al2O3 MOS capacitors Oliver J. Vavasour (24916708) Richard Jefferies (16734736) Marc Walker (1429663) Joseph W. Roberts (9388372) Naomi R. Meakin (24916711) P. M. Gammon (24735244) Paul R Chalker (24105642) Tim Ashley (24766384) Metal oxide semiconductors Capacitors Migrated from ePrints In this work, the role of HCl treatments on InSb surfaces and InSb–Al2O3 dielectric interfaces is characterised. X-ray photoelectron spectroscopy measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl3 which is not present for similar HCl-water processes. Furthermore, this InCl3 layer desorbs from the surface between 200 °C and 250 °C. Metal–oxide–semiconductor capacitors were fabricated using atomic layer deposition of Al2O3 at 200 °C and 250 °C and the presence of InCl3 was associated with a +0.79 V flatband voltage shift. The desorption of the InCl3 layer at 250 °C reversed this shift but the increased process temperature resulted in increased interface-trapped charge (D it) and hysteresis voltage (V H ). This shift in flatband voltage, which does not affect other figures of merit, offers a promising route to manipulate the threshold voltage of MOS transistors, allowing enhancement-mode and depletion-mode devices to be fabricated in parallel.<br><br>The XPS data includes VAMAS files that contain the measured XPS data and modelled (fitted) components - one file for the samples treated in the HCl-water solution and a separate file for the sample treated in the HCl-IPA solution. In each file, the spectra taken after the subsequent annealing steps are included within the same VAMAS files. The XPS data folder also includes a Microsoft Excel spreadsheet, summarising the changes in the HCl-IPA sample after annealing. The electrical characterisation includes the raw measurement data and two Microsoft Excel files - one containing the data extracted from the raw capacitance-voltage data and one summarising the sample yield. The raw data includes, for each device, capacitance-voltage data, corresponding conductance-voltage data and two additional capacitance-voltage and conductance-voltage data files with reverse-direction voltage sweeps appended (where performed). For the control sample, some current-voltage data is also included. 2019-03-14T00:00:00Z Dataset Dataset 10.82444/warw.33777148.v1 https://figshare.com/articles/dataset/Data_for_Effect_of_HCl_cleaning_on_InSb_Al2O3_MOS_capacitors/33777148 CC BY 4.0