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        <identifier>oai:figshare.com:article/33764599</identifier>
        <datestamp>2026-09-14T22:18:53Z</datestamp>
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          <dc:title>Data for Microstructural evolution of mechanically deformed polycrystalline silicon for kerfless photovoltaics</dc:title>
          <dc:creator>M. Wu (1270383)</dc:creator>
          <dc:creator>John D. Murphy (6877151)</dc:creator>
          <dc:creator>J. Jiang (699563)</dc:creator>
          <dc:creator>P. R. Wilshaw (24843112)</dc:creator>
          <dc:creator>A. J. Wilkinson (17212918)</dc:creator>
          <dc:subject>Polycrystals</dc:subject>
          <dc:subject>Microstructure</dc:subject>
          <dc:subject>Silicon</dc:subject>
          <dc:subject>Photovoltaic power generation</dc:subject>
          <dc:subject>Electrons -- Backscattering</dc:subject>
          <dc:subject>Diffraction</dc:subject>
          <dc:subject>Migrated from ePrints</dc:subject>
          <dc:description>Silicon wafers for photovoltaics could be produced without kerf loss by rolling, provided sufficient control of defects such as dislocations can be achieved. Here we report a study using mainly high resolution electron backscatter diffraction (HR-EBSD) of the microstructural evolution of Siemens polycrystalline silicon feedstock during a series of processes designed to mimic high temperature rolling. The starting material is heavily textured and annealing at 1400 ˚C results in 90% recrystallization and a reduction in average geometrically necessary dislocation (GND) density from &gt;1014 m-2 to 1013 m-2. Subsequent compression at 1150 ˚C – analogous to rolling – produces subgrain boundaries seen as continuous curved high GND content linear features spanning grain interiors. Post-deformation annealing at 1400 ˚C facilitates a secondary recrystallization process, resulting in large grains typically of 100 µm diameter. HR-EBSD gives the final average GND density in as 3.2  1012 m-2 . This value is considerably higher than the dislocation density of 5  1010 m-2 from etch pit counting, so the discrepancy was investigated by direct comparison of GND maps and etch pit patterns. The GND map from HR-EBSD gives erroneously high values at the method’s noise floor (~1012 m-2) in regions with low dislocation densities.&lt;br&gt;&lt;br&gt;The dataset (a single file in XLSX format) contains the data behind Figure 5 in the paper. Captions to the figure is given in the paper. Abbreviations, variables and methods used are defined in the paper.   Please address any queries to john.d.murphy@warwick.ac.uk.</dc:description>
          <dc:date>2018-08-01T00:00:00Z</dc:date>
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          <dc:identifier>10.82444/warw.33764599.v1</dc:identifier>
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          <dc:rights>CC BY 4.0</dc:rights>
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