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        <datestamp>2026-09-14T14:19:24Z</datestamp>
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          <dc:title>Data for Combining low-temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon</dc:title>
          <dc:creator>Mohammad Al-Amin (1338681)</dc:creator>
          <dc:creator>John D. Murphy (6877151)</dc:creator>
          <dc:subject>Phosphorus -- Diffusion rate</dc:subject>
          <dc:subject>Phosphorus -- Effect of low temperatures on</dc:subject>
          <dc:subject>Low temperatures</dc:subject>
          <dc:subject>Getters</dc:subject>
          <dc:subject>Silicon crystals</dc:subject>
          <dc:subject>Migrated from ePrints</dc:subject>
          <dc:description>We have investigated low-temperature (≤500 °C) gettering in combination with phosphorus diffusion gettering with a view to improving poor quality multicrystalline silicon. Low-temperature gettering applied after standard phosphorus diffusion gettering is found to provide a &gt;40% improvement in minority carrier lifetime in samples from the top and bottom of an ingot. The best results are achieved at 300 °C with very long annealing times (&gt;24 h). Improvements in the lifetime do not correlate with changes in interstitial iron concentration. Experiments are performed to assess whether the presence of a phosphorus-diffused emitter affects low-temperature gettering, and results from sister samples show the low-temperature gettering behavior is not affected by the existence of an emitter. Further experiments show that low-temperature gettering prior to phosphorus diffusion results in a 20% higher lifetime after phosphorus diffusion. Low-temperature gettering can, therefore, enhance lifetime even when used in conjunction with standard phosphorus diffusion gettering.&lt;br&gt;&lt;br&gt;The dataset (a single file in XLSX format) contains the data behind all the graphs presented in the paper. Each worksheet within the spreadsheet relates to a single figure in the paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.  Data for figures 2, 4, 5, 6, 8 with documentation.</dc:description>
          <dc:date>2017-08-18T00:00:00Z</dc:date>
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          <dc:identifier>10.82444/warw.33743047.v1</dc:identifier>
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          <dc:rights>CC BY 4.0</dc:rights>
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