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oai:figshare.com:article/33738496 2026-09-14T13:00:36Z portal_1197 item_type_3 month_year_09_2026

Data for Ten-fold enhancement of InAs nanowire photoluminescence emission with an InP passivation layer Pamela Jurczak (4662613) Yunyan Zhang (1269093) Jiang Wu (174815) Ana M. Sánchez (2439316) Martin Aagesen (1314750) Huiyun Liu (845957) Nanowires Photoluminescence Optoelectronics Migrated from ePrints In this letter, we demonstrate that a significant improvement of optical performance of InAs nanowires can be achieved by capping the core InAs nanowires with a thin InP shell, which successfully passivates the surface states reducing the rate of non-radiative recombination. The improvements have been confirmed by detailed photoluminescence measurements, which showed up to ten-fold increase in the intensity of room-temperature photoluminescence from the capped InAs/InP nanowires compared to the sample with core-only InAs nanowires. Moreover, the nanowires exhibit high stability of total photoluminescence emission strength across temperature range from 10 to 300 K as a result of strong quantum confinement. These findings could be the key to successful implementation of InAs nanowires into optoelectronic devices.<br><br>Experimental data sheets, charts and images 2018-04-18T00:00:00Z Dataset Dataset 10.82444/warw.33738496.v1 https://figshare.com/articles/dataset/Data_for_Ten-fold_enhancement_of_InAs_nanowire_photoluminescence_emission_with_an_InP_passivation_layer/33738496 CC BY 4.0