2026-10-06T12:55:26Z https://api.figshare.com/v2/oai

oai:figshare.com:article/33351330 2026-09-14T04:01:36Z category_36833 portal_1075 item_type_3 month_year_09_2026

Supplementary Information Pengtao Li (584898) Zhejia Zhang (14438408) Wenjue Zhou (24661431) Zijian Wang (481291) Guobin Zhang (587515) Xuemeng Fan (5352188) Haoxiang Yu (2608582) Dawei Gao (5220917) Bin Yu (14464) Qing Wan (549049) Yishu Zhang (4965589) Physical sciences Volatile Memristor Oxide Heterostructure Self-recitifying Memristor Aritificial Neuron Supplementary Information This section provides additional experimental results supporting the device performance, transport mechanisms, and neuromorphic functionality of the self-rectifying volatile memristor. Statistical analysis of the relaxation time constant τ across the fabricated 8 × 8 passive crossbar array demonstrates excellent uniformity of the volatile dynamics. Control experiments on the single-layer Pt/IGZO/Ti device reveal volatile switching behavior with nearly symmetric I-V characteristics, highlighting the essential role of the Ga₂O₃ interlayer in enabling rectification. Conduction mechanism fitting further confirms defect-mediated transport dominated by trap-assisted tunneling at low forward bias and Poole-Frenkel emission at high forward bias. In addition, detailed measurement configurations and pulse schemes used for leaky integrate-and-fire neuron characterization under varying pulse amplitudes and widths are presented. 2026-09-14T04:01:36Z Dataset Dataset 10.60893/figshare.apl.33351330.v1 https://figshare.com/articles/dataset/Supplementary_Information/33351330 CC BY 4.0