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        <identifier>oai:figshare.com:article/33047474</identifier>
        <datestamp>2026-07-21T13:06:35Z</datestamp>
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          <dc:title>Optical degradation of polysilicon light emitters operating in reach-through after high-temperature operating life testing (HTOL)</dc:title>
          <dc:creator>Marius Goosen (24429311)</dc:creator>
          <dc:subject>Electronic device and system performance evaluation, testing and simulation</dc:subject>
          <dc:subject>Polysilicon</dc:subject>
          <dc:subject>Reach-through</dc:subject>
          <dc:subject>Hot carrier degradation</dc:subject>
          <dc:subject>Optical degradation</dc:subject>
          <dc:subject>Light emitters</dc:subject>
          <dc:subject>High-temperature operating life testing (HTOL)</dc:subject>
          <dc:description>&lt;p dir="ltr"&gt;High-temperature operating life testing (HTOL) is performed on polysilicon light emitters implemented in a standard CMOS process. Two different implementations of a polysilicon light emitter are tested, and the data is presented. A reduction in optical output power is measured with applied stress time, strongly dependent on the applied stress current, and weakly dependent on the applied temperature stress. The dataset contains the normalised, measured output power reduction with the applied stress. Each normalised datapoint represents the average degradation of 4 measured devices.&lt;/p&gt;</dc:description>
          <dc:date>2026-07-21T13:06:35Z</dc:date>
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          <dc:identifier>10.25403/UPresearchdata.33047474.v1</dc:identifier>
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