2026-06-16T18:25:58Z https://api.figshare.com/v2/oai
oai:figshare.com:article/27186993 2024-10-08T13:25:00Z category_26794 category_26803 portal_549 item_type_3 month_year_10_2024
10.5522/04/27186993.v1 https://figshare.com/articles/dataset/Dataset_for_the_article_Forming_and_Compliance-free_Operation_of_Low-energy_Fast-switching_HfO_sub_x_sub_S_sub_y_sub_HfS_sub_2_sub_Memristors_/27186993 https://ndownloader.figshare.com/files/49661676 Lombardo, Antonio Antonio Lombardo Xhameni, Aferdita Aferdita Xhameni <![CDATA[Dataset for the article "Forming and Compliance-free Operation of Low-energy, Fast-switching HfO<sub>x</sub>S<sub>y</sub>/HfS<sub>2</sub> Memristors"]]> Nanoelectronics Nanomaterials Resistive switching Memristors 2D Materials Oxidation 2024-10-08 2024-10-08 Dataset 2024 University College London Dataset for the manuscript "Forming and Compliance-free Operation of Low-energy, Fast-switching HfOxSy/HfS2 Memristors" by Aferdita Xhameni et al.

The dataset is split in two folders containing the data shown in the main manuscript and in the supplementary information respectively. Within each folder, data are organized in sub-folders corresponding to the figures in the article.

The dataset includes:

  1. All the raw electrical data (pulsed switching, switching cycles, retention, etc.) of the experimental resistive memories shown in the paper. The data have been acquired via a Keysight B1500 parameter analyzer equipped with remote sensing units (waveform generator/ fast measurement unit) and a Keysight P9243a oscilloscope.
  2. Simulated current-voltage (I-V) characteristics of HfOx and HfOx/HfS2 memristors generated by using Synopsys Sentaurus TCAD.

]]>