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        <identifier>oai:figshare.com:article/22127027</identifier>
        <datestamp>2023-02-21T11:08:24Z</datestamp>
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          <dc:title>AuNi Schottky contacts on GaN</dc:title>
          <dc:creator>Abdulraoof Ali (14650409)</dc:creator>
          <dc:creator>Walter Meyer (11301462)</dc:creator>
          <dc:subject>Electronic and magnetic properties of condensed matter; superconductivity</dc:subject>
          <dc:subject>Electronic device and system performance evaluation, testing and simulation</dc:subject>
          <dc:subject>Photonic and electro-optical devices, sensors and systems (excl. communications)</dc:subject>
          <dc:subject>Deep-level transient spectroscopy (DLTS)</dc:subject>
          <dc:subject>Current voltage characteristics</dc:subject>
          <dc:subject>Capacitance voltage measurements</dc:subject>
          <dc:subject>X-ray diffraction analysis (XRD)</dc:subject>
          <dc:subject>Electrodeposition mechanism</dc:subject>
          <dc:description>&lt;p&gt;Gallium nitride thin films have attracted attention due to their prospects in semiconductor devices and technology. In this study, investigation is on the electrical properties and also performing deep-level transient spectroscopy (DLTS) on Au/Ni Schottky diodes fabricated on gallium nitride thin films that were synthesized by electrodeposition on a Si (111) substrate from a solution containing gallium nitrate (Ga(NO3)3) and ammonium nitrate (NH4(NO3)) using current densities of 1 and 3 mA/cm2. &lt;/p&gt;</dc:description>
          <dc:date>2023-02-21T11:08:24Z</dc:date>
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          <dc:identifier>10.25403/UPresearchdata.22127027.v1</dc:identifier>
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